-
DOE Workfunction Patterns Strontium BiVO4 Vacuum FrictionalForceMicroscopy Led align PvdfFilm TPU dielectric trench doped Inorganic_Compound HiVacuum VerticalPFM Organic TungstenDeposition Thermal Scanning_Thermal_Microscopy PVAP3HT Gallium_Arsenide DeoxyribonucleicAcid IcelandSpar CNT HardDisk silicon_carbide Vac heterojunctions pulsed_laser_deposition Gold PolymerBlend PvdfBead BlockCopolymer Wildtype
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
Lithography on Si substrate
Scanning Conditions
- System: NX10
- Scan Mode: Lithography
- Cantilever: ContscPt (k=0.2N/m, f=25kHz)
- Scan Size: 10μm×10μm
- Scan Rate: 1Hz
- Pixel: 1024×512
- Litho. mode: Tip bias mode
- Litho. Tip bias: Black -10V, White 0V