-
Magnetic Force Microscopy OxideLayer LiBattery HexagonalBN SSRM semifluorinated_alkane Thermoplastic_polyurethane Ni-FeAlloy Magnetostrictive AdhesionForce MechanicalProperty Gold TemperatureControlledAFM Sadowski SAM Blend AnodizedAluminumOxide WPlug MoirePattern AIN contact blended polymers margarine Phase Optoelectonics Beads membrane FAFailureAnlaysis Chloroform TiO2 Litho heterojunctions IRDetector Ram Fet
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
Semiconductor device, Failure analysis
Scanning Conditions
- System: NX10
- Scan Mode: Conductive AFM
- Cantilever: CDT-Contr (k=0.5N/m, f=20kHz)
- Scan Size: 11μm×11μm
- Scan Rate: 1Hz
- Pixel: 512×512
- Sample bias: -0.5V