-
ScanningSpreadingResistanceMicroscopy Plug Steps IndiumTinOxide Flake Blend Fet PMNPT Litho Ecoli ItoGlass lift_mode cooling Annealed Deposition Christmas SiliconeOxide dichalcogenide EFM PhaseTransition CeNSE_IISc Au111 semifluorinated_alkane NtuEee DLaTGS epitaxy LowDensityPolyethylene LiftHeight HexacontaneFilm NanoLithography Tin disulfide InsulatorFilm mono_layer Composite MESA structure
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
SiC MOSFET
Scanning Conditions
- System: NX-Hivac
- Scan Mode: SSRM
- Cantilever: Full diamond (k=27 N/m)
- Scan Size: 2μm×2μm
- Scan Rate: 0.5Hz
- Pixel: 256×512
- Sample Bias: +2.5V
- Scan Mode: SSRM
- Cantilever: Full diamond (k=27 N/m)
- Scan Size: 2μm×2μm
- Scan Rate: 0.5Hz
- Pixel: 256×512
- Sample Bias: +2.5V